Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage
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چکیده
منابع مشابه
The Interpretation of Ellipsometric Measurements of Ion Bombardment of Noble Gases on Semiconductor
The influence of ion bombardment on the structure of the silicon lattice has been the subject of numerous investigations. The various effects induced by low energy ion bombardment in the outer layers of a solid lattice damage, ion implantation, surface roughness, sputtering and surface state changes are reflected in changes of the complex dielectric constant Z, which can be measured by means of...
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